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advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 1 general description the ap2815 is an integrated high-side power switch that consists of n-channel mosfet, charge pump, over current & temperature and other related protection circuits. the switch?s low r ds(on) , 60m ? , is designed to meet the usb voltage drop requirements. the ic integrates soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remains off unless there is a valid input voltage present. a flag output is available to indicate fault conditions to the local usb controller. the ap2815 is available in standard packages of soic-8 and msop-8. features ? low mosfet on resistance: 60m ? @ v in =5.0v ? compliant to usb specifications ? operating voltage range: 2.7v to 5.5v ? low supply current: 65 a (typ.) ? low shutdown current: 1.0 a (max) ? guarantee 1.5a continuous load ? current limit: 1.65a (min), 2.8a (max) ? under-voltage lockout ? logic level enable pin: e available in active-high or active-low version ? soft start-up ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? deglitched flag output with open drain ? e with output shutdown pull-low resistor for e a/c versions ? ul approved (file no. e339337) ? nemko cb scheme iec60950-1, ref. certif no. no64001 applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebook, motherboard pcs figure 1. package types of ap2815 soic-8 msop-8
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 2 pin configuration m/mm package soic-8/msop-8 figure 2. pin configuration of ap2815 (top view) pin descriptions pin no. name descriptions 1 gnd ground 2, 3 vin supply input pin 4 chip enable, control input, active low or high 5 fault flag pin, output with open drain, need a pull-up resistor in application, acti ve low to indicate ocp or otp. 6, 7, 8 vout output voltage
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2815
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 4 ordering information ap2815 - circuit type product package temperature range condition part number marking id packing type ap2815am-g1 2815am-g1 tube soic-8 ap2815amtr-g1 2815am-g1 tape & reel ap2815amm-g1 2815amm-g1 tube ap2815a msop-8 -40 to 85 c active high with auto discharge ap2815ammtr-g1 2815amm-g1 tape & reel ap2815bm-g1 2815bm-g1 tube soic-8 ap2815bmtr-g1 2815bm-g1 tape & reel ap2815bmm-g1 2815bmm-g1 tube ap2815b msop-8 -40 to 85 c active high without auto discharge ap2815bmmtr-g1 2815bmm-g1 tape & reel ap2815cm-g1 2815cm-g1 tube soic-8 ap2815cmtr-g1 2815cm-g1 tape & reel ap2815cmm-g1 2815cmm-g1 tube ap2815c msop-8 -40 to 85 c active low with auto discharge AP2815CMMTR-G1 2815cmm-g1 tape & reel ap2815dm-g1 2815dm-g1 tube soic-8 ap2815dmtr-g1 2815dm-g1 tape & reel ap2815dmm-g1 2815dmm-g1 tube ap2815d msop-8 -40 to 85 c active low without auto discharge ap2815dmmtr-g1 2815dmm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel blank: tube package m: soic-8 mm: msop-8 condition a: active high w ith auto discharge b: active high without auto discharge c: active low with auto discharge d: active low without auto discharge
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc soic-8 135 thermal resistance (junction to ambient) ja msop-8 150 oc/w esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v operating ambient temperature range t a -40 85 c
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 6 electrical characteristics (v in =5.0v, c in =2.2 f, c out =1.0 f, typical t a = 25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified) parameter symbol test conditions min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5v, i out =1.5a 60 80 m ? current limit i limit v out =4.0v 1.65 2.2 2.8 a supply current i supply v in =5v, r load open 65 85 a fold-back short current i short v out =0 1.12 a shutdown supply current i shutdown chip disable, shutdown mode 0.1 1 a enable high input threshold v enh 1.6 5.5 v enable low input threshold v enl 0 1.0 v enable pin input current i en force 0 to 5.0v at en pin -1.0 1.0 a under voltage lockout threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out ->v in 0.1 1.0 a output pull low resistance after shutdown r discharge ap2815a, ap2815c only 13 50 ? output turn-on time t on from enable active to 90% o f output 500 s flag pindelay time t dflg from over current fault condition to flag active 5 10 15 ms flag pin low voltage v flg i sink =5ma 35 70 mv flag pin leakage i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 thermal shutdown hysteresis t hyotsd 30 o c
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 7 typical performance characteristics figure 4. supply current vs. ambient temperature figure 5. supply current vs. supply voltage figure 6. current limit vs. supply voltage figure 7. current limi t vs. ambient temperature -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 supply current ( a) ambient temperature ( o c) v in =5v enable active no load 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -10 0 10 20 30 40 50 60 70 80 90 100 t a =-40 o c t a = 25 o c t a = 85 o c supply curent ( a) supply voltage (v) enable active 3.0 3.5 4.0 4.5 5.0 5.5 1.6 1.8 2.0 2.2 2.4 v in =5v enable active current limit (a) supply voltage (v) t a =25 o c -40-20 0 20406080 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 enable active current limit (a) ambient temperature ( o c) v in =5v v in =3.3v
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 8 typical performance characteristics (continued) figure 8. switch on resistance vs. temperature figure 9. switch on resistance vs. supply voltage figure 10. flag delay time during over current figure 11. flag delay time during over current vs. ambient temperature vs. supply voltage -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 i out =2.0a v in =5v enable active switch on resistance (m ? ) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 30 40 50 60 70 80 90 100 t a =25 o c switch on resistance (m ? ) supply voltage (v) enable active i out =2.0a -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 5 6 7 8 9 10 11 12 13 14 15 v in =5v enable active flag delay time during over current (ms) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 6 8 10 12 14 t a =25 o c supply voltage (v) v in =5v enable active flag delay time during over current (ms)
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 9 typical performance characteristics (continued) figure 12. output short to gnd current figure 13. output short to gnd current vs. supply voltage vs. ambient temperature figure 14. enable threshold voltage figure 15. enable threshold voltage vs. ambient temperature vs. supply voltage 3.0 3.5 4.0 4.5 5.0 1.00 1.02 1.04 1.06 1.08 1.10 1.12 1.14 1.16 1.18 1.20 1.22 1.24 1.26 1.28 1.30 supply voltage (v) output short to gnd current (a) v in =5v enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 ambient temperature ( o c) output short to gnd current (a) v in =5v enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v en_h v en_l ambient temperature ( o c) v in =5v enable threshold voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 supply voltage (v) v en_h v en_l t a =25 o c enable threshold voltage (v)
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 16. uvlo voltage vs. ambient temperature figure 17. output short to gnd current (v in =5v, c in =1.0 f) figure 18. flag response during over current figure 19. flag response during over temperature (t a =125 o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 v in falling ambient temperature ( o c) enable active v in rising under voltage lockout threshold voltage (v) v en 5v/div i out 1a/div v out 1v/div time 5ms/div time 5ms/div time 5ms/div v flag 1v/div i out 1a/div v out 1v/div v flag 1v/div i out 1a/div v out 1v/div
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 20. output turn on and rise time figure 21. output turn on and rise time (c in =1.0 f, c out =1.0 f, no load) (c in =1.0 f, c out =1.0 f, r l =3.3 ? ) figure 22. output turn on and rise time figure 23. output turn off and fall time (c in =1.0 f, c out =220 f, no load) (v in =5v, c in =1.0 f, no load) v en 5v/div i inrush 20ma/div time 500 s/div time 500 s/div v out 1v/div v en 5v/div i inrush 1a/div v out 1v/div time 500 s/div time 5ms/div v en 5v/div v out 1v/div i inrush 1a/div v en 5v/di v v out 1v/div c out =1 f c out =470 f
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 24. output turn off and fall time (v in =5v, c in =1.0 f, c out =470 f, r l =3.3 ? ) v en 5v/div i out 1a/div time 5ms/div v out 1v/div
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 13 typical application note 2 2.2 f input capacitor is enough in most application cases. if the v out is short to ground frequently during usage, la rge size input capacitor is necessary, recommend 22 f. figure 25. typical application of ap2815
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 14 mechanical dimensions soic-8 unit: mm(inch) r0.150(0.006)
advance datasheet 1.5a high-side power distribution switch with enable and flag ap2815 apr. 2012 rev 1. 7 bcd semiconductor manufacturing limited 15 mechanical dimensions (continued) msop-8 unit: mm(inch) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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